| PART |
Description |
Maker |
| IXTQ44N50P |
Polar N-channel MOSFETs
|
IXYS Corporation
|
| IXFA12N50P |
Polar MOSFETs
|
IXYS Corporation
|
| IXFN102N30P |
Polar MOSFETs
|
IXYS Corporation
|
| PART STC68-15C5 STC68-25C6 STC68-3C3 STC68-4C4 STC |
Subminiature, Leaded Solid Tantalum Capacitors Polar or Non-Polar
|
http://
Vishay Siliconix
|
| IXTP3N120 IXTA3N120 IXTP3N110 IXTA3N110 |
Discrete MOSFETs: Standard N-channel Types
High Voltage Power MOSFETs
|
IXYS[IXYS Corporation]
|
| IXTQ23N60Q |
Discrete MOSFETs: Standard N-channel Types
Power MOSFETs Q-Class
|
IXYS Corporation
|
| FMP26-02P |
Polar P & N-Channel Power MOSFET Common Drain Topology
|
IXYS Corporation
|
| MRF6S19100H MRF6S19100HR3 MRF6S19100HR306 MRF6S191 |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S19100HSR3 1930-1990 MHz, 22 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs
|
Freescale Semiconductor, Inc
MOTOROLA
|
| IXFT12N100 IXFT10N100 |
Discrete MOSFETs: HiPerFET Power MOSFETS
N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
From old datasheet system
|
IXYS[IXYS Corporation]
|
| IXFH9N80 IXFH8N80 |
HiPerFET Power MOSFETs - N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源击穿电00V,导通电.1Ω的N沟道增强B>HiPerFET功率MOSFET)
Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS[IXYS Corporation]
|
